Heteroepitaxial reflector for the fabrication of Si thin film photovoltaic devices


TitleHeteroepitaxial reflector for the fabrication of Si thin film photovoltaic devices
Publication TypeJournal Article
Year of Publication2013
AuthorsAsante, K, Cross, M, Varhue, W
JournalAIP Advances
Volume3
Issue10
Pagination102130
Date Published2013
ISSN21583226
Abstract

Thin film crystalline Si diodes are a viable solution to the goal of fabricating economical photovoltaic (PV) cells. A functional, light trapping, thin film PV was fabricated with a heteroepitaxial (YSZ) reflecting layer which also served as a complaint layer for the growth of crystalline Si or SiGe active layers. X-ray analysis confirmed that the deposited semiconductor layers were crystalline. It was observed that the light trapping PV cell formed with the YSZ reflector layer increased the short circuit current under illumination by 22% over that fabricated without the YSZ reflector layer. It was further observed that the surface texture in the YSZ layer contributed to both the ability to grow crystalline semiconductor layers and to act as an effective light trapping structure.

DOI10.1063/1.4827500
Short TitleAIP Advances
Status: 
Published
Attributale Grant: 
RACC
Grant Year: 
Year3